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| WS128K32-XXX HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES s Access Times of 15, 17, 20, 25, 35, 45, 55ns s MIL-STD-883 Compliant Devices Available s Packaging * 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400) * 68 lead, 40mm CQFP (G4T), 3.56mm (0.140") (Package 502). * 68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"), (Package 509) * 68 lead, 22.4mm Low Profile CQFP (G1U), 3.57mm (0.140"), (Package 519) s Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8 s Low Power Data Retention - only available in G2T package type s Commercial, Industrial and Military Temperature Ranges s 5 Volt Power Supply s Low Power CMOS s TTL Compatible Inputs and Outputs s Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation s Weight: WS128K32-XG1UX - 5 grams typical WS128K32-XG2TX - 8 grams typical WS128K32-XH1X - 13 grams typical WS128K32-XG4TX - 20 grams typical s All devices are upgradeable to 512Kx32 FIG. 1 PIN CONFIGURATION FOR WS128K32N-XH1X PIN DESCRIPTION 34 I/O15 I/O14 I/O13 I/O12 OE NC WE1 I/O7 I/O6 I/O5 I/O4 33 I/O24 I/O25 I/O26 A6 A7 NC A8 A9 I/O16 I/O17 I/O18 44 VCC CS4 WE4 I/O27 A3 A4 A5 WE3 CS3 GND I/O19 55 45 I/O31 I/O30 I/O29 I/O28 A0 A1 A2 I/O23 WE1 CS 1 WE2 CS2 WE3 CS 3 WE 4CS4 TOP VIEW 1 I/O8 I/O9 I/O10 A13 A14 A15 A16 NC I/O0 I/O1 I/O2 11 22 12 WE2 CS2 GND I/O11 A10 A11 A12 VCC CS1 NC I/O3 23 56 I/O0-31 Data Inputs/Outputs A0-16 WE1-4 CS1-4 OE VCC GND NC Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected BLOCK DIAGRAM OE A0-16 128K x 8 128K x 8 I/O22 I/O21 I/O20 66 128K x 8 128K x 8 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 January 2001 Rev. 7 1 White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com WS128K32-XXX FIG. 2 PIN CONFIGURATION FOR WS128K32-XG4TX TOP VIEW NC A0 A1 A2 A3 A4 A5 CS1 GND CS3 WE A6 A7 A8 A9 A10 VCC PIN DESCRIPTION I/O0-31 A0-16 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 WE CS1-4 OE VCC GND NC BLOCK DIAGRAM CS 1 WE OE A0-16 128K x 8 128K x 8 CS 2 CS3 CS4 128K x 8 128K x 8 VCC A11 A12 A13 A14 A15 A16 CS2 OE CS4 NC NC NC NC NC NC NC 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 FIG. 3 PIN CONFIGURATION FOR WS128K32-XG2TX AND WS128K32-XG1UX TOP VIEW PIN DESCRIPTION I/O0-31 A0-16 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 WE2 WE3 WE4 VCC A16 CS1 OE CS2 A11 A12 A13 A14 A15 NC NC A0 A1 A2 A3 A4 A5 CS3 GND CS4 WE1 A6 A7 A8 A9 A10 VCC 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 NC NC NC I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 WE1-4 CS1-4 OE VCC 0.940" GND NC The White 68 lead G2T/G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T/G1U has the TCE and lead inspection advantage of the CQFP form. OE A0-16 BLOCK DIAGRAM WE1 CS 1 WE2 CS2 WE3 CS 3 WE 4CS4 128K x 8 128K x 8 128K x 8 128K x 8 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com 2 WS128K32-XXX ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC -0.5 Min -55 -65 -0.5 Max +125 +150 Vcc+0.5 150 7.0 Unit C C V C V Parameter OE capacitance WE1-4 capacitance HIP (PGA) H1 CQFP G4 CQFP G2T G1U CS1-4 capacitance Data I/O capacitance Address input capacitance CS H L L L OE X L X H X H L H TRUTH TABLE WE Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.3 -55 Max 5.5 VCC + 0.3 +0.8 +125 Unit V V V C CAPACITANCE (TA = +25C) Symbol COE CWE Conditions VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz 20 50 20 20 CCS CI/O CAD VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz 20 20 50 pF pF pF Max 50 Unit pF pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage Sym ILI ILO ICC ISB VOL VOH Sym ILI ILO ICC ISB VOL VOH Conditions Min VCC = 5.5, VIN = GND to VCC CS = VIH, OE = VIH, VOUT = GND to VCC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 IOL = 8mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 Conditions Min VCC = 5.5, VIN = GND to VCC CS = VIH, OE = VIH, VOUT = GND to VCC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 IOL = 2.1mA, VCC = 4.5 IOH = -1.0mA, VCC = 4.5 2.4 2.4 -15 Max 10 10 600 80 0.4 2.4 -35 Max 10 10 600 60 0.4 2.4 Min Min -17 Max 10 10 600 80 0.4 2.4 -45 Max 10 10 600 60 0.4 2.4 Min Min -20 Max 10 10 600 80 0.4 2.4 -55 Max 10 10 600 60 0.4 Min -25 Max 10 10 600 60 0.4 Units A A mA mA V V Units A A mA mA V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V LOWER POWER DATA RETENTION CHARACTERISTICS (L PRODUCT ONLY) (TA = -55C to +125C), (TA = -40C to +85C) Characteristic Lower Power Data Retention Voltage Lower Power Data Retention Quiescent Current Chip Disable to Data Retention Time (1) Operation Recovery Time (1) NOTE: Parameter guaranteed, but not tested. Sym VCC ICCDR TCDR TR Conditions VCC = 2.0V CS VCC -0.2V VIN VCC -0.2V or VIN 0.2V Min 2 0 TRC Typ 1 Max 4 Units V mA ns ns 3 White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com WS128K32-XXX AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z tRC tAA tOH tACS tOE tCLZ 1 tOLZ 1 tCHZ 1 tOHZ 1 3 0 12 12 0 15 10 3 0 12 12 Symbol -15 Min 15 15 0 17 10 3 0 12 12 Max -17 Min 17 17 0 20 12 3 0 12 12 Max Min 20 20 0 25 15 3 0 20 20 -20 Max Min 25 25 0 35 20 3 0 20 20 -25 Max Min 35 35 0 45 25 3 0 20 20 -35 Max Min 45 45 0 55 30 -45 Max -55 Min 55 55 Max ns ns ns ns ns ns ns ns ns Units 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time tWC tCW tAW tDW tWP tAS tAH tOW 1 tWHZ 1 tDH 0 Symbol Min 15 14 14 10 14 0 0 3 10 0 -15 Max 17 14 15 10 14 0 0 3 10 0 -17 Min Max Min 20 15 15 12 15 0 0 3 12 0 -20 Max Min 25 20 20 15 20 0 0 3 15 0 -25 Max 35 25 25 20 25 0 0 4 20 0 -35 Min Max Min 45 30 30 25 30 0 0 4 25 0 -45 Max Min -55 Max ns ns ns ns ns ns ns ns 25 ns ns Units WS128K32-XXX / 55 EDI8C32128C 45 45 25 45 0 0 4 1. This parameter is guaranteed by design but not tested. FIG. 4 AC TEST CIRCUIT Current Source I OL AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level D.U.T. VZ Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V 1.5V Output Timing Reference Level C eff = 50 pf (Bipolar Supply) I OH Current Source NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com 4 WS128K32-XXX FIG. 5 TIMING WAVEFORM - READ CYCLE ADDRESS tRC tAA CS tRC ADDRESS tACS tCLZ OE tCHZ tAA tOH DATA I/O PREVIOUS DATA VALID DATA VALID tOE tOLZ DATA I/O HIGH IMPEDANCE tOHZ DATA VALID READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) FIG. 6 WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tCW CS tAH tAS WE tWP tOW tWHZ tDW tDH DATA I/O DATA VALID WRITE CYCLE 1, WE CONTROLLED FIG. 7 WRITE CYCLE - CS CONTROLLED ADDRESS tWC WS32K32-XHX tAS tAW tCW tAH CS tWP WE tDW DATA I/O DATA VALID tDH WRITE CYCLE 2, CS CONTROLLED 5 White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com WS128K32-XXX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) 27.3 (1.075) 0.25 (0.010) SQ PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM 25.4 (1.0) TYP 4.34 (0.171) MAX 3.81 (0.150) 0.13 (0.005) 2.54 (0.100) TYP 1.42 (0.056) 0.13 (0.005) 0.76 (0.030) 0.13 (0.005) 15.24 (0.600) TYP 1.27 (0.050) TYP DIA 0.46 (0.018) 0.05 (0.002) DIA 25.4 (1.0) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T) 39.6 (1.56) 0.38 (0.015) SQ 3.56 (0.140) MAX PIN 1 IDENTIFIER Pin 1 12.7 (0.500) 0.5 (0.020) 4 PLACES 5.1 (0.200) 0.25 (0.010) 4 PLACES 0.25 (0.010) 0.05 (0.002) 1.27 (0.050) TYP 38 (1.50) TYP 4 PLACES 0.38 (0.015) 0.08 (0.003) 68 PLACES ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com 6 WS128K32-XXX PACKAGE 509: 68 LEAD, LOW PROFILE CERAMIC QUAD FLAT PACK, CQFP (G2T) 25.15 (0.990) 0.26 (0.010) SQ 22.36 (0.880) 0.26 (0.010) SQ 4.57 (0.180) MAX 0.27 (0.011) 0.04 (0.002) Pin 1 0.25 (0.010) REF 24.03 (0.946) 0.26 (0.010) 1 / 7 1.0 (0.040) 0.127 (0.005) R 0.25 (0.010) 0.19 (0.007) 0.06 (0.002) 23.87 (0.940) REF DETAIL A 1.27 (0.050) TYP 0.38 (0.015) 0.05 (0.002) 20.3 (0.800) REF SEE DETAIL "A" 0.940" TYP The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U) 25.27 (0.995) 0.13 (0.005) SQ 23.88 (0.940) 0.25 (0.010) SQ 3.56 (0.140) MAX 0.25 (0.010) 0.61 (0.024) 0.15 (0.006) 0.84 (0.033) REF DETAIL A 1.27 (0.050) 0.38 (0.015) 0.05 (0.002) 20.3 (0.800) REF SEE DETAIL "A" The White 68 lead G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G1U has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 7 White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com WS128K32-XXX ORDERING INFORMATION W S 128K 32 X - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55C to +125C I = Industrial -40C to +85C C = Commercial 0C to +70C PACKAGE TYPE: H1 = 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400) G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509) G1U = 22.4mm Ceramic Quad Flat Pack, Low Provile CQFP (Package 519) G4T = 40 mm Low Profile CQFP (Package 502) ACCESS TIME (ns) IMPROVEMENT MARK: N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades L = Low Power ORGANIZATION, 128Kx32 User configurable as 256Kx16 or 512Kx8 SRAM WHITE ELECTRONIC DESIGNS CORPORATION White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com 8 WS128K32-XXX DEVICE TYPE 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module 128K x 32 SRAM Module SPEED 55ns 45ns 35ns 25ns 20ns 17ns 15ns 55ns 45ns 35ns 25ns 20ns 17ns 15ns 55ns 45ns 35ns 25ns 20ns 17ns 15ns 55ns 45ns 35ns 25ns 20ns 17ns 15ns PACKAGE 66 pin HIP (H1) 66 pin HIP (H1) 66 pin HIP (H1) 66 pin HIP (H1) 66 pin HIP (H1) 66 pin HIP (H1) 66 pin HIP (H1) 68 lead CQFP Low Profile (G4T) 68 lead CQFP Low Profile (G4T) 68 lead CQFP Low Profile (G4T) 68 lead CQFP Low Profile (G4T) 68 lead CQFP Low Profile (G4T) 68 lead CQFP Low Profile (G4T) 68 lead CQFP Low Profile (G4T) 68 lead CQFP/J (G2T) 68 lead CQFP/J (G2T) 68 lead CQFP/J (G2T) 68 lead CQFP/J (G2T) 68 lead CQFP/J (G2T) 68 lead CQFP/J (G2T) 68 lead CQFP/J (G2T) 68 lead CQFP/J(G1U) 68 lead CQFP/J (G1U) 68 lead CQFP/J (G1U) 68 lead CQFP/J (G1U) 68 lead CQFP/J (G1U) 68 lead CQFP/J (G1U) 68 lead CQFP/J (G1U) SMD NO. 5962-93187 05H4X 5962-93187 06H4X 5962-93187 07H4X 5962-93187 08H4X 5962-93187 09H4X 5962-93187 10H4X 5962-93187 11H4X 5962-95595 05HYX 5962-95595 06HYX 5962-95595 07HYX 5962-95595 08HYX 5962-95595 09HYX 5962-95595 10HYX 5962-95595 11HYX 5962-95595 05HMX 5962-95595 06HMX 5962-95595 07HMX 5962-95595 08HMX 5962-95595 09HMX 5962-95595 10HMX 5962-95595 11HMX 5962-95595 05H9X 5962-95595 06H9X 5962-95595 07H9X 5962-95595 08H9X 5962-95595 09H9X 5962-95595 10H9X 5962-95595 11H9X 9 White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com |
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